High-capacity low cost multi-state magnetic memory

ABSTRACT

A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.

CROSS REFERENCE TO RELATED APPLICATIONS

This is a divisional application of U.S. patent application Ser. No.11/678,515, filed on Feb. 23, 2007, and entitled “A High Capacity LowCost Multi-State Magnetic Memory”, which claims priority to U.S.Provisional Application No. 60/777,012 filed on Feb. 25, 2006 andentitled “A High Capacity Low Cost Multi-State Magnetic Memory” and is acontinuation-in-part of U.S. patent application Ser. No. 11/674,124entitled “Non-Uniform Switching Based Non-Volatile Magnetic BaseMemory”, filed on Feb. 12, 2007, the disclosure of which is incorporatedherein by reference, as though set forth in full.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to non-volatile magnetic memoryand particularly to multi-state magnetic memory.

2. Description of the Prior Art

Computers conventionally use rotating magnetic media, such as hard diskdrives (HDDs), for data storage. Though widely used and commonlyaccepted, such media suffer from a variety of deficiencies, such asaccess latency, higher power dissipation, large physical size andinability to withstand any physical shock. Thus, there is a need for anew type of storage device devoid of such drawbacks.

Other dominant storage devices are dynamic random access memory (DRAM)and static RAM (SRAM) which are volatile and very costly but have fastrandom read/write access time. Solid state storage, such assolid-state-nonvolatile-memory (SSNVM) devices having memory structuresmade of NOR/NAND-based Flash memory, providing fast access time,increased input/output (IOP) speed, decreased power dissipation andphysical size and increased reliability but at a higher cost which tendsto be generally multiple times higher than hard disk drives (HDDs).

Although NAND-based flash memory is more costly than HDD's, it hasreplaced magnetic hard drives in many applications such as digitalcameras, MP3-players, cell phones, and hand held multimedia devices due,at least in part, to its characteristic of being able to retain dataeven when power is disconnected. However, as memory dimensionrequirements are dictating decreased sizes, scalability is becoming anissue because the designs of NAND-based Flash memory and DRAM memory arebecoming difficult to scale with smaller dimensions. For example,NAND-based flash memory has issues related to capacitive coupling, fewelectrons/bit, poor error-rate performance and reduced reliability dueto decreased read-write endurance. Read-write endurance refers to thenumber of reading, writing and erase cycles before the memory starts todegrade in performance due primarily to the high voltages required inthe program, erase cycles.

It is believed that NAND flash, especially multi-bit designs thereof,would be extremely difficult to scale below 45 nanometers. Likewise,DRAM has issues related to scaling of the trench capacitors leading tovery complex designs which are becoming increasingly difficult tomanufacture, leading to higher cost.

Currently, applications commonly employ combinations of EEPROM/NOR,NAND, HDD, and DRAM as a part of the memory in a system design. Designof different memory technology in a product adds to design complexity,time to market and increased costs. For example, in hand-heldmulti-media applications incorporating various memory technologies, suchas NAND Flash, DRAM and EEPROM/NOR flash memory, complexity of design isincreased as are manufacturing costs and time to market. Anotherdisadvantage is the increase in size of a device that incorporates allof these types of memories therein.

There has been an extensive effort in development of alternativetechnologies such as Ovanic Ram (or phase-change memory), FerromagneticRam (FeRAM), Magnetic Ram (MRAM), Nanochip, and others to replacememories used in current designs such as DRAM, SRAM, EEPROM/NOR flash,NAND flash and HDD in one form or another. Although these variousmemory/storage technologies have created many challenges, there havebeen advances made in this field in recent years. MRAM seems to lead theway in terms of its progress in the past few years to replace all typesof memories in the system as a universal memory solution.

One of the problems with prior art memory structures is that the currentand power requirements are too high to make a functional memory deviceor cell. This also poses a key concern regarding the reliability of suchdevices due to likely dielectric break-down of the tunneling barrierlayer and thereby making it non-functional.

The challenge with other prior art techniques has been that theswitching current is too high to allow the making of a functional devicefor memory applications due to the memory's high power consumption.Several recent publications, such as those cited below as references 5and 6^((5,6)) have shown that the switching current can be reduced byhaving the memory element pinned by two anti-ferromagnetic (AF)-couplelayers resulting in spin oscillations or “pumping” and thereby reducingthe switching current.

An additionally known problem is using magnetic memory to store morethan two states therein. To this end, multi-level or multi-statemagnetic memory cells or elements for storing more than one bit ofinformation do not exist.

What is needed is magnetic memory for storing more than one bit ofdigital information.

SUMMARY OF THE INVENTION

To overcome the limitations in the prior art described above, and toovercome other limitations that will become apparent upon reading andunderstanding the present specification, the present invention disclosesa method and a corresponding structure for a magnetic storage memorydevice that is based on current-induced-magnetization-switching havingreduced switching current in the magnetic memory.

Briefly, one embodiment of the present invention includes a multi-statecurrent-switching magnetic memory element having a stack of magnetictunneling junction (MTJ) separated by a non-magnetic layer for storingmore than one bit of information, wherein different levels of currentapplied to the memory element cause switching to different states, eachMTJ including a fixed layer, a barrier layer and a free layer. Theswitching current for the layers of each of the MTJs of the stack isdifferent due to their aspect ratio or anisotropy, therefore the statesof the free layers of each MTJ change independently of others by theapplication of different amounts of switching current.

These and other objects and advantages of the present invention will nodoubt become apparent to those skilled in the art after having read thefollowing detailed description of the preferred embodiments illustratedin the several figures of the drawing.

IN THE DRAWINGS

FIG. 1 shows relevant layers of a multi-state current-switching magneticmemory element 100 are shown, in accordance with an embodiment of thepresent invention.

FIG. 2 shows various states of the memory element 100.

FIG. 3 shows a graph of the level of resistance (R) of each of thelayers 118, 114, 110 and 106 (shown in the y-axis) vs. the state of thememory element 100.

FIG. 4 shows a graph 250 of the tunneling magneto resistance (TMR),shown in the y-axis, vs. the resistance area (RA). FIG. 5 shows.

FIG. 5 shows relevant layers of a multi-state current-switching magneticmemory element 600 are shown, in accordance with another embodiment ofthe present invention.

FIG. 6 shows relevant layers of a multi-state current-switching magneticmemory element 700, in accordance with yet another embodiment of thepresent invention.

FIG. 7 shows relevant layers of a multi-state current-switching magneticmemory element 800, in accordance with still another embodiment of thepresent invention.

FIG. 8 shows a program/erase circuit for programming and/or erasing thememory elements of the various embodiments of the present invention.

FIG. 9 shows a read circuit for reading the memory elements of thevarious embodiments of the present invention.

FIG. 10 shows Table 1, which shows certain exemplary characteristics ofthe embodiments of FIGS. 1, 5 and 6.

FIG. 11 shows Table 2, which shows certain exemplary characteristics ofthe embodiment of FIG. 7.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

In the following description of the embodiments, reference is made tothe accompanying drawings that form a part hereof, and in which is shownby way of illustration of the specific embodiments in which theinvention may be practiced. It is to be understood that otherembodiments may be utilized because structural changes may be madewithout departing from the scope of the present invention.

In an embodiment of the present invention, a multi-state magnetic memorycell is disclosed. In one embodiment of the present invention, a stackof magnetic tunnel junction (MTJ) is formed, each MTJ being formed of atleast three layers: a barrier layer, a fixed layer, and a free layer.The barrier layer is formed between a fixed layer and a free layer, witheach MTJ being separated from another by a conductive layer, the stackof MTJs forms a multi-state magnetic memory cell for storing at leasttwo bits of digital information.

Referring now to FIG. 1, relevant layers of a multi-statecurrent-switching magnetic memory element 100 are shown, in accordancewith an embodiment of the present invention. The memory element 100 isshown to include a bottom electrode 122 on top of which is shown formeda pinning layer 120 on top of which is shown formed a fixed layer 118,on top of which is shown formed a barrier layer 116, on top of which isformed a free layer 114, on top of which is shown formed a non-magneticlayer 112, on top of which is shown formed a free layer 110, on top ofwhich is shown formed a barrier layer 108, on top of which is shownformed a fixed layer 106, on top of which is shown formed a pinninglayer 104, on top of which is shown formed a top electrode 102. The topelectrode 102 and the bottom electrode 122 are each made of Tantalum(Ta) in an exemplary embodiment although other suitable materials arecontemplated. The layers 114, 116 and 118 are shown to form a MTJ 126separated by the layer 112 from an MTJ 124, which is formed from thelayers 106, 108 and 110. The MTJ 124 and 126 form the relevant parts ofa stack of memory elements. In fact, while two MTJs are shown to formthe stack of FIG. 1, other number of MTJs may be stacked for storingadditional bits of information.

In FIG. 1, the MTJ 126 is for storing a bit of information or twostates, ‘1’ and ‘0’, while the MTJ 124 is for storing another bit ofinformation and since each bit represents two binary states, i.e. ‘1’and ‘0’, two bits represent four binary states, generally represented as‘00’, ‘01’, ‘10’, ‘11’, or 0, 1, 2 and 3 in decimal notation,respectively. The memory element 100 advantageously stores two bits ofinformation thereby decreasing the real estate dedicated for memory andfurther increases system performance. This is particularly attractivefor embedded memory applications. Additionally, manufacturing is madeeasier and less costly and scalability is realized.

In FIG. 1, the barrier layers of each of the MTJs, such as the layer 116acts as a filter for electrons with different spins giving rise todifferent amounts of tunneling current for electrons with differentspins thereby causing two unique resistance values associated with eachMTJ for two different orientations of the free layer. In the case whereadditional MTJs are employed, each MTJ similarly has associatedtherewith, a unique resistance value.

In one embodiment of the present invention, the thickness of the layers108 and 116 cause the MTJs 124 and 126 to have different resistances andtherefore capable of storing more than one bit.

Examples of materials used to form each of the layers of the memoryelement 100 will now be presented. It should be noted that thesematerials are merely examples and other types of materials may beemployed. The layers 104 and 120, are each typically formedsubstantially of IrMn or PtMn or NiMn or any other material includingManganese (Mn). The layers 106 and 118 are typically formedsubstantially of a magnetic material. Examples of such magnetic materialinclude CoFeB or CoFe/Ru/CoFeB. The layers 108 and 116 are each madesubstantially of a non-magnetic material, an example of which ismagnesium oxide (MgO). The layer 112 is a non-magnetic layer madesubstantially of, for example, NiNb, NiP, NiV or CuZr. The layer 112serves to insulate the two MTJs 124 and 126 from one another. In anembodiment employing more than two MTJs, another layer, such as thelayer 112 would be formed on top of the layer 104 or on the bottom ofthe layer 120. The layers 110 and 114 are each made of CoFeB containingoxides intermixed. The layers 110 and 114 are substantially amorphous inan at-deposited state. The top electrode 102 and the bottom electrode122 are each made of tantalum (Ta), in one embodiment of the presentinvention, however, other types of conductive material may be employed.

The layers 120 and 104 are anti-ferromagnetic (AF) coupling layers. Morespecifically, for example, the magnetic moment of the layer 104 helps topin the magnetic moment of the layer 106. Similarly, the magnetic momentof the layer 120 serves to pin the magnetic moment of the layer 118. Themagnetic moment of each of the layers 120 and 104 are permanently fixed.

Other choices of material for the layers 108 and 116 are aluminum oxide(Al2O3) and titanium oxide (TiO2). A thin-layer of one of theconstituent elements may be deposited prior to the deposition of thebarrier oxide layer. For example, a 2-5 A thick Mg layer may bedeposited prior to the deposition of the layers 108 and 116. This limitsany damage of the magnetic-free layer from intermixing of the elementsduring deposition. The layer 112 is a non-magnetic layer which issubstantially amorphous made of, for example, Nickel niobium (NiNb),Nickel phosphorous (NiP), Nickel vanadium (NiV), Nickel bororn (NiB) orcopper-zirconium (CuZr). It should be noted that the composition ofthese alloys is chosen in such a way that the resulting alloy becomessubstantially amorphous, for example, for nickel niobium (NiNb), thetypical Nb content is maintained between 30 to 70 atomic percent and fornickel phosphorous (NiP) the phosphorous (P) content is maintainedbetween 12 and 30 atomic percent. The layer 112 serves to isolate thetwo MTJs 124 and 126 from one another. In an embodiment of the presentinvention, which employs more than two MTJs, another layer, such as thelayer 112 would be formed on top of the layer 104 or on the bottom ofthe layer 120. The layers 110 and 114 are each made of CoFeB containingoxides intermixed. The layers 110 and 114 are substantially amorphous inan as-deposited state. The top and the bottom electrodes are typicallymade of tantalum (Ta).

The layers 120 and 104 are anti-ferromagnetic (AF) coupling layers. Morespecifically, for example, the magnetic moment of the layer 104 helps topin the magnetic moment of the layer 106. Similarly, the magnetic momentof the layer 120 serves to pin the magnetic moment of the layer 118. Themagnetic moment of each of the layers 120 and 104 are permanently fixed.This is typically done by a magnetic annealing process following thedeposition of all the layers and involves heating the wafer consistingof at least one memory element 100 under the application of asubstantially uni-axial magnetic field of over 5 kilo-Oersteds and atemperature of over 350 degree centigrade for typically 2 hours. Thisannealing process also serves to re-crystallize the layers 108 and 116and their respective adjacent free layers 110 and 114. This process isessential for making high performing magnetic tunnel junctions.

Typical thicknesses for each of the layers of the memory element 100 arenow presented. However, these sizes are merely examples, as otherthicknesses are anticipated. A typical thickness of each of the topelectrode 102 and the bottom electrode 122 is 30 to 200 nm. While apreferred thickness is typically 50 nm, the actual thickness choice maydepend on the requirements from the metallization process. The layers104 and 120 are typically 20 to 100 nm in thickness with a preferredthickness of 25-50 nm. The layers 108 and 116 are typically made ofthree layers of Cobalt-Iron (CoFe)/Ruthenium (Ru)/Cobalt-Iron-Boron(CoFeB) with CoFe layer being placed adjacent to the layers 104 and 120.The typical thickness of the CoFe layer is 3 to 10 nm, Ru layer is 0.6to 1.0 nm to create anti-ferromagnetic coupling between the two adjacentmagnetic layers of CoFe and CoFeB. The CoFeB layer is typically 2 to 10nm thick with a preferred range of 2.5 to 5 nm. The free layers 110 and114 are typically 2 to 7 nm thick with a preferred range of 2-5 nm andmay contain a 1-2 nm thick layer of Co—Fe-oxide inter-dispersed in thatlayer in order to get low switching current during current inducedswitching. The barrier layers 108 and 116 are typically 0.8 to 3 nm. Itis very likely that the two barrier layers may have slightly differentthickness, for example layer 116 can be 1.5 to 2.5 nm thick while thesecond barrier layer 108 may be 0.8 to 1.2 nm thick, and vice-versa.Additionally, the thickness and the amounts of oxide in the free-layers110 and 114 may be different by a factor of 1.5 or higher. Thenon-magnetic layer 112 is typically 2 to 50 nm thick with a preferredrange being 2 to 10 nm. It should be pointed out that while thepreferred material choice of the non-magnetic isolation layer 112consists of amorphous non-magnetic alloys, a crystalline non-magneticalloy may also work.

During manufacturing, the layers of the memory element 100 are formed inthe manner described hereinabove. Additionally, an annealing process,which is well known, is performed heating the memory element 100 in thepresence of a magnetic field after which channels are formed in each ofthe layers 108 and 116. Following the annealing process, the fixedlayers 106 and 118 are oriented in a particular orientation and thelayers 108 and 116 as well as the layers 110 and 114, take oncrystalline characteristics.

During operation, current is applied, in a perpendicular directionrelative to the plane of the paper of FIG. 1, either from a directionindicated by the arrow 128 or a direction indicated by the arrow 130.When current is applied, depending on the level of current, the magneticmoment of the layers 110 and 114 are each caused to be switched to anopposite direction, or not. Since the MTJs 124 and 126 are made withdifferent aspect ratios (or anisotropy), the switching current isdifferent for these two MTJs. For example, in one embodiment of thepresent invention, the aspect ratio for MTJ 124 is approximately 1:1.3to 1:1.5 while the aspect ratio for the MTJ 126 is approximately 1:2 to1:2.5. Therefore, the switching current for the MTJ 126 is 3-5 timeshigher than that of the MTJ 124, in the foregoing embodiment. At highcurrent levels both MTJs switch magnetic orientation, while at lowcurrent levels only the MTJ 124 having the smaller aspect ratioswitches.

The state of the magnetic moment of each of the layers of the MTJdefines the state of the memory element 100. As the layers 104 and 120each act as AF coupling layers, they pin or switch the magnetic momentsof the their neighboring fixed layer, which, then, by the application ofcurrent, causes neighboring free layers to switch or not. Morespecifically, the layer 118 defines one state, the layer 114 definesanother state, the layer 110 defines yet another state and the layer 106defines still another state. For the sake of understanding, the statesof each of the layers 118, 114, 110 and 106 are referred to as states 1,2, 3 and 4, respectively.

FIG. 2 shows various states of the memory element 100. Due to the use oftwo MTJs, four different states or two bits may be stored, therefore,the states 1-4 are shown. At each state, the directions of the arrowsindicate the direction of the magnetic moments of free layers andpinning layers. The direction of the arrow 200 shows the direction ofhigh current applied to the memory element 100 and in this case, thestate of the memory element 100 is at an all ‘1’s or all ‘0’s state. Thedirection of the arrow 202 shows the direction of low current applied tothe memory element 100 when at state 1. The direction of the arrow 204shows the direction of high current applied to the memory element 100when the latter is at state 2 and the direction of the arrow 206 showsthe direction of low current applied to the memory element 100 when atstate 3.

FIG. 3 shows a graph of the level of resistance (R) of each of thelayers 118, 114, 110 and 106 (shown in the y-axis) vs. the state of thememory element 100. Thus, at, for example, at 208, the memory element100 has taken on the state 1 (corresponding to 202 on FIG. 2), at 210,the memory element 100 has taken on the state 2 (corresponding to 204 onFIG. 2), at 212, the memory element 100 has taken on the state 3(corresponding to 206 on FIG. 2), and at 214, the memory element 100 hastaken on the state 4 (corresponding to 200 on FIG. 2). The level ofresistance for each of these states is indicated in Table 1, at a columnlabeled “Total R”. For example, at state 1, the R, in FIG. 3 isindicated as being 3 kilo ohms (K Ohms) by Table 1. At state 2, the R,in FIG. 3, is indicated as being 4 K Ohms and so on. The values used forresistance serve as examples only such that other values may be employedwithout departing from the scope and spirit of the present invention.

It should be noted that different aspect ratio or anisotropy associatedwith the different MTJs 124 and 126 causes the different switching ofthe MTJs, which results in two bits being stored in the memory element100. In other embodiments, some of which will be shortly presented anddiscussed, the size of the barrier layers of the MTJs are changed toeffectuate different resistances. In yet other embodiments, the size ofthe MTJs are changed to the same.

FIG. 4 shows a graph 250 of the tunneling magneto resistance (TMR),shown in the y-axis, vs. the resistance area (RA). The TMR is definedas:TMR=(Rh−Rl)/Rl  Eq. (1)

Wherein Rh is resistance at a high state and Rl is resistance at a lowstate.

The graph 250 of FIG. 4 serves merely as an example to convey thedifference in TMR or percentage increase as the RA increases. Forinstance, at an RA of 2 ohm-micro-meters squared, the TMR is 100% whileat a RA of 10, the TMR is 150% where the thickness of the barrier layerof the MTJ is between 14-24 Angstroms.

FIG. 5 shows relevant layers of a multi-state current-switching magneticmemory element 600 are shown, in accordance with another embodiment ofthe present invention. The memory element 600 is shown to include abottom electrode 122 on top of which is shown formed a pinning layer 120on top of which is shown formed a fixed layer 118, on top of which isshown formed a barrier layer 116, on top of which is formed a free layer114, on top of which is shown formed a non-magnetic layer 112, as thatshown in FIG. 1. As previously indicated, relative to FIG. 1, the MTJ126 comprises the layers 114, 116 and 118. However, in the embodiment ofFIG. 5, the MTJ 612, which is made of a free layer 602, a barrier layer604 and a fixed layer 606, is smaller, in its planar dimension, than theMTJ 126 of FIG. 1, which causes the MTJ 612 to have a differentresistance than that of the MTJ 126.

In FIG. 5, the free layer 602 is shown to be formed on top of the layer112 and on top of the layer 602 is shown formed the layer 604, on top ofwhich is shown formed the layer 606, on top of which is shown formed apining layer 608, a top electrode 610. The MTJs 126 and 612 are shownseparated by the layer 112. The MTJs 126 and 612 form the relevant partsof a stack of memory elements. In fact, while two MTJs are shown to formthe stack of FIG. 5, other number of MTJs may be stacked for storingadditional bits of information.

The difference in the planar dimension of the MTJs 612 to that of theMTJ 126 is approximately 1 to 10 and typically 1 to 3, in one embodimentof the present invention. The material for each of the layers of thememory element 600 may be the same as that of counterpart layers of thememory element 100. For example, the layer 602 is made of the samematerial as that of the layer 110 and the layer 604 is made of the samematerial as that of the layer 108 and the layer 606 is made of the samematerial as the layer 106 and the layer 608 is made of the same materialas the layer 104. The top electrodes 610 and 102 are made of the samematerial. In another embodiment, the MTJ 612 may be larger, in size, inthe same planar dimension, than the MTJ 126.

The operation of the embodiment of the embodiment of FIG. 5 is the sameas that of FIG. 1.

FIG. 6 shows relevant layers of a multi-state current-switching magneticmemory element 700, in accordance with yet another embodiment of thepresent invention. The memory element 700 to include a bottom electrode122 on top of which is shown formed a pinning layer 120 on top of whichis shown formed a fixed layer 118, on top of which is shown formed abarrier layer 116, on top of which is formed a free layer 114, on top ofwhich is shown formed a non-magnetic layer 112, as that shown in FIGS. 1and 6. As previously indicated, relative to FIGS. 1 and 6, the MTJ 126comprises the layers 114, 116 and 118. However, in the embodiment ofFIG. 6, the MTJ 714, which is shown to comprise a free layer 710, abarrier layer 708 and a fixed layer 706, is shown to be smaller in itsplanar dimension than the MTJ 126 causing the MTJ 714 to have adifferent resistance than that of the MTJ 126.

The MTJs 126 and 714 are shown separated by the layers 702 and 704.Although the layer 704 serves to pin the layer 706 while the layer 702serves to isolate the MTJ 126 and is an amorphous only to the layer 114.The layer 702, in one embodiment of the present invention, is made oftwo non-magnetic layers, such as Ta and/or an amorphous alloy, the sameas Nickel-niobium (NiNb) or nickel-phosphorus (NiP). The MTJs 126 and612 form the relevant parts of a stack of memory elements. In fact,while two MTJs are shown to form the stack of FIG. 5, other number ofMTJs may be stacked for storing additional bits of information.

The difference in the planar dimension of the MTJs 714 to that of theMTJ 126 is 1 to 10, and typically 1 to 3 in one embodiment of thepresent invention. The material for each of the layers of the memoryelement 700 may be the same as the counterpart layers of the memoryelement 100 or that of the memory element 600. For example, the layer710 is made of the same material as that of the layer 110 and the layer708 is made of the same material as that of the layer 108 and the layer706 is made of the same material as the layer 106 and the layer 704 ismade of the same material as the layer 104. The top electrodes 712 and102 are made of the same material. In another embodiment, the MTJ 714may be larger in size in the same planar dimension, than the MTJ 126.

FIG. 7 shows relevant layers of a multi-state current-switching magneticmemory element 800, in accordance with still another embodiment of thepresent invention. In FIG. 7, the memory element 800 is shown to includea bottom electrode 802 on top of which is shown formed a pinning layer804 on top of which is shown formed two fixed layers on either sidethereof. That is, a fixed layer 806 is shown formed on one side of thelayer 804 and a fixed layer 808 is shown formed on an opposite side ofthe layer 804.

In FIG. 7, two MTJs are shown formed on either side or top of the layer804. Namely, an MTJ 820 is shown formed on one side of the layer 804 andanother MTJ 822 is shown formed on an opposite side of the layer 804.The MTJ 820 includes the fixed layer 806, which is formed on top of thelayer 804 and the barrier layer 810 shown formed on top of the layer 806and the free layer 812 shown formed on top of the layer 810. The MTJ 822is shown to include the fixed layer 808, which is formed on top of thelayer 804 and the barrier layer 814, which is shown formed on top of thelayer 808 and the free layer 816, which is shown formed on top of thelayer 814. A top electrode 818 is shown formed on top of the MTJs 820and 822 or more specifically on top of the layers 812 and 816. The topelectrode 818 is typically made of two layers, such as Ta and aconductive, non-magnetic material.

In forming the memory element 800, the layer 804 is formed on top of thebottom electrode and the layers of the MTJs 820 and 822 are formed ontop of the layer 804 and on top of the MTJs 820 and 822 is formed thetop electrode 818. The layers of the MTJs 820 and 822 are formeduniformly and continuously on top of the layer 804 and a trench 824,which is basically an empty space or hole is formed, prior to depositingthe top electrode 818, by etching through the layers of the MTJs 820 and822. In this manner, the fixed layers of the MTJs 820 and 822 are thesame layer prior to etching and the barrier layers of the MTJs 820 and822 are the same layer prior to etching and the free layers of the MTJs820 and 822 are the same layer prior to etching.

In one embodiment of the present invention, the trench 824 is filledwith a dielectric material, such as silicon dioxide (SiO2) or siliconnitride (SiNx) to enhance stability.

After etching, the top electrode 818 is deposited or formed on top ofthe MTJs 820 and 822. The embodiment of FIG. 7, as the embodiments ofFIGS. 6, 5, and 1 store two bits of information, with one bit stored ineach MTJ. Thus, the MTJ 820 is for storing one bit and the MTJ 822 isfor storing another bit of information. However, more bits may be storedby adding MTJs. In FIG. 7, additional MTJs may be added on top of thelayer 804 or the MTJs 820 and 822. With the addition of MTJs, beyondthat which is shown in FIG. 7, additional notches or spaces are formedbetween the MTJs, such as the space or notch 824.

Table 2 shows certain exemplary characteristics of the embodiment ofFIG. 7. It should be noted that similarly, Table 1 shows certainexemplary characteristics of the embodiments of FIGS. 1, 5 and 6.

For example, in Table 2, under the “Total R” column, there is shown theresistance at each state of the memory element 800, such as the state 1,the state 2, the state 3 and the state 4. As previously noted, eachstate represents a binary value such that four states, and representedby two bits are stored. The programming current, in micro amps, i.e. thecurrent needed to program the memory element 800 to a given state, isindicated in the last column of Table 2, under the label “Prog I”.

In an alternative embodiment of the present invention, a non-uniformswitching based non-volatile magnetic memory element, such as thenon-uniform switching based non-volatile magnetic memory element 100disclosed in U.S. patent application Ser. No. 11/674,124 entitled“Non-Uniform Switching Based Non-Volatile Magnetic Base Memory”, filedon Feb. 12, 2007, may be employed to replace the MTJs of the variousembodiments shown and discussed herein. For example, the MTJ 124 or theMTJ 126 may be replaced with a non-uniform switching based non-volatilemagnetic memory element. Other MTJs discussed herein may also bereplaced with non-uniform switching based non-volatile magnetic memoryelement. This advantageously further reduces the requisite switchingcurrent to enhance system performance.

FIG. 8 shows a program/erase circuit for programming and/or erasing thememory elements of the various embodiments of the present invention. InFIG. 8, a current source 902 is shown coupled to a current mirrorcircuit 904, which is shown coupled to the switch 906, which is, inturn, shown coupled to the switch 968, which is shown coupled to themulti-state current-switching magnetic memory cell 914, which is showncoupled to the switch 916. Further shown in FIG. 8, a current source 918is shown coupled to a current mirror circuit 920 and further showncoupled to Vcc on an opposite end thereto. The circuit 920 is furthershown coupled to the switch 999.

The circuit 904 is shown to include a P-type transistor 922, a P-typetransistor 924 and a P-type transistor 926. The source of each of thetransistors 922, 924 and 926 are shown coupled to Vcc. Vcc is at apredetermined voltage level that is higher than ground. The gate of thetransistor 922 is shown coupled to the current source 902 and theopposite side of the current source 902 is shown coupled to ground. Thedrain of the transistor 922 is shown coupled to its gate as well as tothe gate of the transistor 924 and the gate of the transistor 926. Thedrains of the transistors 924 and 926 are shown coupled to the switch906. The memory cell 914 is shown to include an MTJ 910, an MTJ 912 andan access transistor 940. The MTJ 912 is shown coupled in series to theMTJ 912, which is shown coupled to the drain of the transistor 940. Thegate of the transistor 940 is shown coupled to the word line 942. Theword line 942 selects a memory cell. The source of the transistor 940 isshown coupled to the switch 916.

The circuit 920 is shown to include an N-type transistor 928, an N-typetransistor 930 and an N-type transistor 932. The drains of thetransistors 928, 930 and 932 are shown coupled to ground. The gate ofthe transistor 932 is coupled to the current source 918 and is furthercoupled to the drain of the transistor 932 and is further coupled to thegate of the transistor 930 as well as to the gate of the transistor 928.The drain of the transistors 930 and 928 are shown coupled to the switch999.

Each of the switches 908 and 916 are shown operative to switch betweentwo states, a program state and an erase state. The switches 906 and 999are shown operative to switch between two states.

The MTJs 910 and 912 are similar to the MTJs of previous figures, suchas those depicted in FIGS. 1 and 6. In an alternative embodiment, theMTJs 910 and 912, coupled in parallel, would be similar to the MTJsshown in FIG. 7. Each MTJ 910 and 912 possesses a resistance of adifferent or unique value. The difference in their resistance resultsfrom the difference in the aspect ratio or size or anisotropy of theMTJs.

The size of the transistor 926 is greater than the size of thetransistors 922 and 924. Similarly, the size of the transistor 928 isgreater than the size of the transistors 930 and 932. In one embodimentof the present invention, the size difference of the foregoingtransistors is 4 to 1. To explain the operation of programming, anexample is provided with fixed values but it should be noted that thesevalues may be altered without departing from the scope and spirit of thepresent invention.

In operation, to program the memory cell 914 to a state 1, a current oflevel of 50 micro Amps is applied by the current source 902 to thecircuit 904, which is amplified to 4× the current level or 200microAmps, as shown in Table 1 because the transistor 926 is able todrive this level of current. This causes the switch 906 to switch to thestate indicated at 944. The switch 908 is set to ‘program’ state, as isthe switch 916, which causes the 200 micro amp current to flow throughthe MTJs 910 and 912 and the transistor 940 is selected by raising thevoltage on the word line 942. This results in programming of state 1.The magnetic moment of the free layers of the MTJs 910 and 912 will becaused to be aligned with the magnetic moment of that of theirrespective fixed layers. This results in the lowest resistance of thememory cell 914, as indicated in Table 1.

In programming the memory cell 914 to a state 2, a current of level of50 micro Amps is applied by the current source 918 to the circuit 920,which is the same current level as that generated by the circuit 920.The current level for state 2 is indicated in Table 1. The switch 999 iscaused to be switched to the state indicated at 948. The switches 908and 916 are both set to ‘erase’ state, which causes the 50 micro ampcurrent to flow through the MTJs 910 and 912 and the transistor 940 isselected by raising the voltage on the word line 942. This results inprogramming of state 2. The magnetic moment of the free layer of the MTJ910 is caused to be switched to an anti-parallel state or a state thatis in opposite to being aligned with its respective fixed layer. The MTJ912 remains in the state it was in at state 1. The reason for this is,that in one embodiment of the present invention, with the aspect ratioof the MTJ 912 being higher than that of MTJ 910, it is prevented fromswitching. This results in the resistance of the memory cell 914indicated in Table 1.

In programming the memory cell 914 to a state 3, a current of level of50 micro Amps is applied by the current source 918 to the circuit 920,which causes the current level, generated by the transistor 928 to be 4times that of the level of the current source, or 200 micro amps. Thecurrent level for state 3 is indicated in Table 1. The switch 999 iscaused to be switched to the state indicated at 950. The switches 908and 916 are both set to ‘erase’ state, which causes the 200 micro ampcurrent to flow through the MTJs 910 and 912 and the transistor 940 isselected by raising the voltage on the word line 942. This results inprogramming of state 3. The magnetic moment of the free layers of theMTJs 910 and 912 are caused to be switched to an anti-parallel staterelative to their respective fixed layers. This results in theresistance of the memory cell 914 to be that indicated in Table 1.

To program the memory cell 914 to a state 4, a current of level of 50micro Amps is applied by the current source 902 to the circuit 904,which is the current level of the circuit 904 and that which isindicated in Table 1 for state 4. This causes the switch 906 to switchto the state indicated at 946. The switch 908 is set to ‘program’ state,as is the switch 916, which causes the 50 micro amp current to flowthrough the MTJs 910 and 912 and the transistor 940 is selected byraising the voltage on the word line 942. This results in programming ofstate 4. The magnetic moment of the free layer of the MTJ 910 will becaused to be aligned with the magnetic moment of that of its respectivefixed layer. The MTJ 912 remains in its anti-parallel state, the reasonfor this is due the difference in the aspect ratios of the two MTJs asdiscussed hereinabove. This results in a resistance of the memory cell914 indicated in Table 1.

FIG. 9 shows a read circuit for reading the memory elements of thevarious embodiments of the present invention. FIG. 9 is shown to includea memory cell 1002 coupled to a sense amplifier circuit 1004, which isshown coupled to a reference circuit 1006. The memory cell 1002 is shownto include an access transistor 1008, an MTJ 1010 and an MTJ 1012. Thetransistor 1008 is shown to have a drain, a source and a gate. The gateof the transistor 1008 is shown coupled to a word line 1014, the drainof the transistor is shown coupled to ground and the source of thetransistor is shown coupled to the MTJ 1010.

It should be noted that wherever values are indicated herein, they areto merely serve as examples with the understanding that other suitablevalues are anticipated. It is further noted that while reference is madeto an N-type or P-type transistor, either type or other suitable typesof transistors may be employed, as the type of transistor indicated inthe foregoing embodiments, merely serve as examples.

The circuit 1006 is shown to include a number of state referencecircuits, indicated as state reference circuit 1020, 1022 and 1024. Eachof the circuits 1020-1024 includes an access transistor and a referenceresistor. For example, the circuit 1020 is shown to include a referenceresistor 1026 coupled on one side to the circuit 1004 and Vcc and on theother side to the drain of an access transistor 1028. The gate of thetransistor 1028 is shown coupled to a select signal, namely select 1signal 1040.

Similarly, the circuit 1022 is shown to include a reference resistor1030 coupled on one side to the circuit 1004 and Vcc and on the otherside to the drain of an access transistor 1032. The gate of thetransistor 1032 is shown coupled to a select signal, namely the select 2signal 1042. The circuit 1024 is shown to include a reference resistor1034 coupled on one side to the circuit 1004 and Vcc and on the otherside to the drain of an access transistor 1036. The gate of thetransistor 1044 is shown coupled to a select signal, namely the select 3signal 1044.

The MTJs 1010 and 1012, as stated relative to FIG. 8, are similar to theMTJs of the embodiments of the present invention except that in the caseof FIG. 7, the MTJs of the read circuit would be coupled in parallelrather than in series, shown in FIG. 9.

During a read operation, the memory cell 1002 is selected by raising thevoltage of the word line 1014. The circuit 1004 compares the totalresistance of the MTJs 1010 and 1012 with the resistances of thereference resistors of the state reference circuits. For example, theresistance of the MTJs 1010 and 1012 (collectively or added together) iscompared to the resistance of the resistor 1026 and if it is determinedto be less, the state of the memory cell 1002 is declared as binaryvalue ‘00’ or perhaps, state 1. However, if the resistance of the MTJs1010 and 1012, collectively, is determined to be higher than that of theresistor 1026, the former is then compared to the resistance of theresistor 1030 and there again, if the resistance of the MTJs 1010 and1012 is less than the resistor 1030, the state 2 or binary value ‘01’.If the resistance of the MTJs 1010 and 1012 is determined to be greaterthan the resistor 1030, the resistance of the MTJs 1010 and 1012 iscompared to the resistance of the resistor 1034 and if the resistance ofthe former is determined to be lower, the state 3 or binary value ‘10’is declared (or read), otherwise, the state 4 or binary value ‘11’ isdeclared.

The select signal of each of the circuits 1020-1024 are used to selectthe corresponding circuit. For example, to compare the resistance of theMTJs to the resistance of the resistor 1026, the signal 1040 isactivated thereby turning on the transistor 1028. In the meanwhile, theremaining transistors of the circuit 1006 are off. Similarly, to comparethe resistance of the MTJs to the resistance of the resistor 1030, thesignal 1042 is activated thereby turning on the transistor 1032. In themeanwhile, the remaining transistors of the circuit 1006 are off. Tocompare the resistance of the MTJs to the resistance of the resistor1034, the signal 1044 is activated thereby turning on the transistor1036. In the meanwhile, the remaining transistors of the circuit 1006are off.

Examples of resistance values of the reference resistors are averages ofthe resistances of the MTJs 1010 and 1012. For example, the resistanceof the resistor 1026 is the average of the resistances of the MTJs 1010and 1012 at the states 1 and 4, as indicated in Table 1. The resistanceof the resistor 1030 is the average of the resistances of the MTJs 1010and 1012 at the states 2 and 4, as indicated in Table 1. The resistanceof the resistor 1034 is the average of the resistances of the MTJs 1010and 1012 at the states 2 and 3, as indicated in Table 1. For example, inone embodiment of the present invention, the resistor 1026 has aresistance of 3.5 kilo-ohm, which is the average of 3 and 4 kilo-ohms.The resistance of the resistor 1030 is 4.5 kilo-ohms, which is theaverage of 5 and 4 kilo-ohms and the resistance of the resistor 1034 is5.5 kilo-ohms, which is the average of 5 and 6 kilo-ohms.

In alternative embodiments of the present invention, the MTJs (or memoryelements) disclosed in U.S. patent application Ser. No. 11/674,124entitled “Non-Uniform Switching Based Non-Volatile Magnetic BaseMemory”, filed on Feb. 12, 2007, may be employed in the embodiments ofFIGS. 8 and 9 herein.

It should be noted that the objects of the drawings or figures discussedand presented herein are not necessarily drawn to scale.

Although the present invention has been described in terms of specificembodiments, it is anticipated that alterations and modificationsthereof will no doubt become apparent to those skilled in the art. It istherefore intended that the following claims be interpreted as coveringall such alterations and modification as fall within the true spirit andscope of the invention.

1. A method of making a multi-state current-switching magnetic memoryelement comprising: depositing a first pinning layer on top of a bottomelectrode; depositing a first magnetic tunneling junction (MTJ) of astack of MTJs on top of the first pinning layer; forming a non-magneticlayer on top of the first MTJ wherein the non-magnetic layer is formedof a material selected from a group comprising: Nickel niobium (NiNb),Nickel phosphorous (NiP), Nickel vanadium (NiV), Nickel bororn (NiB) andcopper-zirconium (CuZr); forming a second MTJ on top of the non-magneticlayer, each of the first and second MTJs of the stack having a uniqueresistance associated therewith, the stack capable of storing more thanone bit of information, each of the first and second MTJs of the stackincluding a barrier layer having a thickness associated therewith, eachof the at least two MTJs further including a free layer and a fixedlayer, the barrier layer of the first MTJ of the stack directlycontacting and formed on top of the fixed layer of the first MTJ of thestack and the free layer of the first MTJ of the stack directlycontacting and formed on top of the barrier layer of the first MTJ ofthe stack, the non-magnetic layer directly contacting and formed on topof the free layer of the first MTJ of the stack, the free layer of thesecond MTJ of the stack directly contacting and formed on top of thenon-magnetic layer and the barrier layer of the second MTJ of the stackformed on top of the free layer of the second MTJ of the stack and thefixed layer of the second MTJ of the stack directly contacting andformed on top of the barrier layer of the second MTJ of the stack, thebarrier layer of each of the first and second MTJ of the stack having athickness that is different from the thickness of the barrier layers ofall of the other MTJs of the stack, the thickness of the barrier layerof each of the first and second MTJs of the stack being at least in partindicative of the resistance of each of the MTJs of the stack, the stackbeing capable of storing one bit in each of the MTJs of the stack;depositing a second pinning layer on top of the second MTJ of the stack;and depositing a top electrode on top of the second pinning layer.
 2. Amethod of making a multi-state current-switching magnetic memoryelement, as recited in claim 1, further applying different levels ofcurrent to the multi-state current-switching magnetic memory element tocause switching to different states.
 3. A method of making a multi-statecurrent-switching magnetic memory element, as recited in claim 1,wherein the first MTJ of the stack is larger, in size, in the sameplanar dimension, than the second MTJ of the stack.
 4. A method ofmaking a multi-state current-switching magnetic memory element, asrecited in claim 1, wherein forming the barrier layer of each of thefirst and second MTJs of the stack substantially of magnesium oxide(MgO).
 5. A method of making a multi-state current-switching magneticmemory element, as recited in claim 1, wherein forming the fixed layerof each of the first and second MTJs substantially of a magneticmaterial.
 6. A method of making a multi-state current-switching magneticmemory element, as recited in claim 1, wherein forming the top electrodeof Tantalum (Ta).
 7. A method of making a multi-state current-switchingmagnetic memory element, as recited in claim 1, wherein forming each ofthe first and second pinning layers substantially of IrMn or PtMn orNiMn or any other material including Manganese (Mn).
 8. A method ofmaking a multi-state current-switching magnetic memory element, asrecited in claim 1, wherein forming each of the first and second fixedlayers substantially of a magnetic material.
 9. A method of making amulti-state current-switching magnetic memory element, as recited inclaim 1, wherein forming each of the first and second fixed layersmagnetic material including CoFeB or CoFe/Ru/CoFeB.
 10. A method ofmaking a multi-state current-switching magnetic memory element, asrecited in claim 1, wherein the non-magnetic layer is made of amorphousnon-magnetic alloys.
 11. A method of making a multi-statecurrent-switching magnetic memory element, as recited in claim 1,wherein the non-magnetic layer is made of a crystalline non-magneticalloy.
 12. A method of making a multi-state current-switching magneticmemory element, as recited in claim 1, wherein each of the barrierlayers of the stack have a thickness and that the thickness of at leasttwo of the barrier layers is different from each other.
 13. A method ofmaking a multi-state current-switching magnetic memory element, asrecited in claim 1, wherein the first and second MTJ each have an aspectratio and the aspect ratio of the first MTJ is different than the aspectratio of the second MTJ.